1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
The CAS300M17BM2 is the industry’s first all-SiC 1.7-kV power module that is available in an industry standard 62-mm housing. The half-bridge module exhibits an 8 mΩ on-resistance and is capable of ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...
UK-based Dynex Semiconductor has announced the development of a new 450A, 650V GaN half-bridge power module, designed to ...
Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an industry standard 62 mm housing. Powered by Cree's C2MT large area SiC chip technology, the half-bridge module exhibits an 8 ...
Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two ...
Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...
The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied ...
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